Powerful cleaner app download windows 10. ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance R DS (on) per area Figure Of Merit. STPOWER SiC MOSFETs bring now the advantages of the innovative wide bandgap materials (WBG) to your next design.ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance R DS(on) per.
Select the right Silicon Carbide or IGBT gate driver for your next energy-efficient, robust and compact system design
High efficiency
Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC and IGBT gate drivers.
Advanced protection
Achieve robust isolated systems using our gate drivers with fast integrated short-circuit protection and high surge immunity.
Compact solution
Reduce your system size, weight and cost by switching SiC at higher PWM frequencies with our fast, robust and reliable drivers.
UCC21710-Q1
UCC21710-Q1 is a single channel isolated gate driver for SiC/IGBT with high-CMTI and advanced protection .
UCC21750
UCC21750 is a single channel isolated gate driver for SiC/IGBT with high-CMTI, and advanced protection using desaturation.
UCC21530-Q1
Automotive, 4-A, 6-A, 5.7-kVrms isolated dual-channel gate driver with enable
High system efficiency
ISO5852S enables >99% efficiency 10kW grid-tied solar inverter switching at 50kHz.
Robustness
Si Most Common Ion
ISO5852S driving, sensing & protecting >100A SiC power modules.
Compact solution
UCC21530 enables 98.5% efficiency 6.6kW totem-pole PFC for EV on-board charger switching at 100kHz.
Featured design resources
IGBT & SiC Gate Driver Fundamentals
Discover solutions to some of the most commonly asked IGBT and SiC gate driver questions. While this e-book goes into further detail, you can jump into the most relevant topics for your design at the right.
- IGBT and SiC power switch fundamentals
- IGBT and SiC protection basics
Silicon carbide gate drivers – a disruptive technology in power electronics
Silicon carbide cannot realize its full potential without the right ecosystem, in this case, the gate driver. Read about the disruptive technology and how it is impacting power electronics.
Understanding the short circuit protection for Silicon Carbide MOSFETs
Get to know and compare various short circuit protection methods for SiC MOSFETs.
Enabling high voltage signal isolation quality and reliability
Get to know and understand capacitive isolation as the leading technology to provide robust and reliable solutions.
Featured video
C2000 real-time controllers enable engineers to create more efficient and reliable high power systems. Precision sensing, powerful processing, and premium actuation capabilities specifically designed for high-frequency power control applications.
Learn more about C2000 real-time controllers
Looking for robust & reliable isolation solutions?
Sic Mosfet Manufacturers
Checkout TI’s isolation portfolio and find the latest isolation resources here.